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DMG5802LFX
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
24
±12
Unit
V
V
Continuous Drain Current (Note 5) V GS = 4.5V
Continuous Drain Current (Note 5) V GS = 2.5V
Pulsed Drain Current (Note 6)
Steady
State
Steady
State
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I DM
6.5
5.2
5.6
4.5
70
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T A = +25°C (Note 5)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Max
0.98
126.5
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = +25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
24
—
—
—
—
—
—
1.0
±10
V
μ A
μ A
V GS = 0V, I D = 250 μ A
V DS = 24V, V GS = 0V
V GS = ±12V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V GS(th)
0.6
0.9
1.5
V
V DS = V GS , I D = 250 μ A
—
11
15
V GS = 4.5V, I D = 6.5A
Static Drain-Source On-Resistance
R DS (ON)
—
—
12
13
17
18
m ?
V GS = 4V, I D = 5.6A
V GS = 3.1V, I D = 5.6A
—
14
20
V GS = 2.5V, I D = 5.6A
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
—
—
17
0.6
—
0.9
S
V
V DS = 5V, I D = 6.5A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge V GS = 4.5V
Total Gate Charge V GS = 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
—
—
—
—
—
—
—
—
—
—
—
—
1066.4
132.0
127.1
1.47
14.5
31.3
2.0
3.1
3.69
13.43
32.18
22.45
—
—
—
—
—
—
—
—
—
—
—
—
pF
?
nC
ns
ns
ns
ns
V DS = 15V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = 4.5V, V DS = 15V, I D = 5.8A
V GS = 10V, V DS = 15V,
I D = 5.8A
V GS = 10V, V DS = 15V,
R L = 2.1 ? , R G = 3 ?
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG5802LFX
Document number: DS35009 Rev. 5 - 2
2 of 6
www.diodes.com
November 2013
? Diodes Incorporated
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